FCP099N60E mosfet equivalent, n-channel mosfet.
* 650 V @ TJ = 150°C
* Typ. RDS(on) = 87 mΩ
* Ultra Low Gate Charge (Typ. Qg = 88nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 309 pF)
* 1.
* Telecom / Sever Power Supplies
* Industrial Power Supplies
Description
SuperFET® II MOSFET is Fairchild Semic.
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